Resumo

JOYA, MIRYAM R.; BARBA, JOSE J.  e  PIZANI, PAULO S.. STRUCTURAL EFFECTS IN THE SEMICONDUCTOR INSB BY THE APPLICATION OF DIFFERENT METHODS OF PRESSURE. Dyna rev.fac.nac.minas [online]. 2012, vol.79, n.175, pp.137-141. ISSN 0012-7353.

This paper studies the modifications suffered by the Indium Antimonnide (InSb), grown in the [100], when subjected to mechanical tests of micro-indentations, high hydrostatic pressure and pressure impact. Tomographic surveying and samples were made by micro-Raman spectroscopy with different wavelengths of excitation light. The shift of the position of the phonons and the emergence of new Raman peaks allow both chemical and structural analysis of the system.

Palavras-chave : Raman; pressure; InSb; indentation; structural phase transition.

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