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Ingeniería e Investigación

Print version ISSN 0120-5609


MARTIN RODRIGUEZ, Eduardo  and  GONZALEZ R, Estrella. GaAs/AlGaAs nanoheterostruc- nanoheterostructures. Ing. Investig. [online]. 2011, vol.31, n.1, pp.144-153. ISSN 0120-5609.

This work analyses the features of GaAs/AlGaAs heterostructure, highlighting semiconductor junction properties. Charge confinement was produced when two materials having different band-gap were fixed; such high electron concentration is called two-dimensional electron gas (2DEG). Device simulation for smart integrated systems (DESSIS) is simulation software which uses physical models and robust numerical methods for simulating semiconductor devices and 3-5 element heterostructures. Results for different heterostructure doping profiles and voltages are presented in this work. High electron mobility transistors (HEMTs) are one of the most important applications for heterostructures; they work on 30 to 300 GHz frequency ranges. These transistors are simulated in this work; a 1 A/mm2 high current density was obtained in the channel, such value being comparable to other values reported for similar transistors.

Keywords : HEMT; heterostructure; DESSIS; simulation.

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