Resumo

OSORNO, Yurany A.; MUNOZ, John Ever; LONDONO, Nelson  e  VELILLA, Esteban. Methodology to obtain the linear range of a transistor as a control element in a DC current source. Rev.fac.ing.univ. Antioquia [online]. 2013, n.67, pp.89-97. ISSN 0120-6230.

This paper presents a methodology to develop direct current sources using BJT transistors on the linear region (active region). This region depends on the saturation voltage, maximum power and polarization voltage of the element; from these parameters it is obtained the load resistance range that ensures a constant current. The methodology is used to develop a DC current source prototype of 2A and the range of the load resistance is defined by the transistor characteristics. The temperature and power constrains are taking into account.

Palavras-chave : Direct current source; BJT transistor; polarization voltage; saturation voltage; active region; maximum power; loads resistance.

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