Abstract

ECHEVERRI HOLGUIN, Luis Adrián  and  REYES PINEDA, Henry. Hydrodynamic Behavior of an Electrochemical Reactor for Waste Recovery in the Semiconductor Films Manufacture. Rev. Fac. ing. [online]. 2013, vol.22, n.34, pp.35-43. ISSN 0121-1129.

In the optoelectronics laboratory affiliated to the University of Quindio it has been implemented the Liquid Phase Epitaxy Technique, used to elaborate semiconductor GalnAsSb films, which generates a waste with an average weight of 1457 mg, a higher proportion is constituted by gallium, indium and antimony, which can be recovered by electrochemical processes. This study's purpose was to recycle and crystallize these pure metals at low cost, with zero metallic waste products in the semiconductor films manufacturing. The studies were carried out in a compartments separated's electrochemical reactor, by injecting a NaCl tracer solution in the cathodic compartment, determining the conductivity at the reactor inlet and outlet, thereby describing a hydrodynamic behavior's mathematical model, by distributing time residence (DTR) and thus applying it to these metals recovery, operating the device at constant intensity (galvanostatic mode) and at constant potential (potentiostatic mode).

Keywords : Epitaxy; Semiconductor; Hydrodynamic Behavior; Electrochemical reactor; Galvanostatic; Potentiostatic.

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