Resumo

LOSADA-LOSADA, Juan D.  e  PULZARA-MORA, Álvaro. CHARACTERIZATION OF AlGaAs THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING. Momento [online]. 2018, n.57, pp.50-59. ISSN 0121-4470.  https://doi.org/10.15446/mo.n57.68732.

AlGaAs layers were deposited by RF magnetron sputtering on glass and Si (100) substrates. The substrate temperature was kept constant and the power ratio of the Al and GaAs targets was varied. In order to decrease the effects of decoupling the lattice parameter between the AlGaAs layer and the Si substrate, a GaAs buffer layer was deposited. The X-ray diffraction spectra show that the films are polycrystalline with preferential orientation (111). The Raman spectra show a behavior of two modes, corresponding to TO and LO vibrational modes of GaAs and AlAs, respectively.

Palavras-chave : AlGaAs; Magnetron sputtering.

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