Abstract

VALLEJO, William et al. Synthesis and characterization of In(O;OH)S/AgInS₂ interface heterojunction. Tecnura [online]. 2014, vol.18, n.spe, pp.30-40. ISSN 0123-921X.  https://doi.org/10.14483/udistrital.jour.tecnura.2014.DSE1.a02.

In this work, we presented some complementary studies for In(O,OH)S thin films deposited on AgInS₂ thin films to fabricate a new system absorbent-layer/buffer-layer to be used in tandem and/or in one-junction solar cells. As showed in previous works carried out for us, AgInS₂ layers were grown by co-evaporation from metal precursors in a two-step process; and In(O,OH)S thin films were deposited by Chemical Bath deposition. X-ray diffraction measurements indicated that AgInS₂ thin film grown with chalcopyrite structure; and In(O,OH)S films grown with polycrystalline structure. The AgInS₂ thin films presented p-type conductivity, and from transductance measurements it was found a high absorption coefficient (greater than 10⁴ cm⁻¹) and an energy band gap of 1.95 eV; and In(O,OH)S thin films presented Eg about 3.01 eV; morphological analysis indicated that under this synthesis conditions, In(O,OH)S thin films coated completely the AgInS₂ absorber layer. Finally, the Avrami-Erofeev equation was used in this work to study In(O,OH)S thin film growth rate on AgInS₂ substrate. Results indicate that the developed system can be used in single-junction and multiple junction solar cells.

Keywords : absorber layer thin film; AgInS_2, buffer layer; In(O,OH)S; optic window; solar cells.

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