Abstract

ARREDONDO, C. A et al. AES depth profile and photoconductive studies of AgInS₂ thin films prepared by co-evaporation. Rev. ing. univ. Medellín [online]. 2014, vol.13, n.24, pp.121-131. ISSN 1692-3324.

In this study, thin films of AgInS₂ with chalcopyrite-type tetragonal structure were grown by means of a procedure based on the sequential evaporation of metallic precursors in presence of elemental sulfur in a two-stage process. The effect of the growth temperature and the proportion of the evaporated Ag mass in relation to the evaporated In mass (m_Ag/m_In) on the phase and homogeneity in the chemical composition were researched through X-ray diffraction measurements and Auger electrons spectroscopy. These measurements evidenced that the conditions for preparing thin films containing only the AgInS₂ phase, grown with tetragonal chalcopyrite-type structure and good homogeneity of the chemical composition in the entire volume, are a temperature of 500 °C and a 0.89 m_Ag/m_In proportion. The transient photocurrent measurements indicated that the electricity transmission is affected by recombination processes via band-to-band transitions and trap-assisted transitions.

Keywords : XRD; AES; solar cells; thin films.

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