Abstract

ARISTIZABAL, Parménides; RESTREPO, Ricardo León; OSPINA, Walter Antonio  and  DUQUE, Carlos Alberto. ENERGÍA DE ENLACE DE EXCITONES EN POZOS CUÁNTICOS DE GaAs/Ga_1-xAl_xAs. Rev.EIA.Esc.Ing.Antioq [online]. 2007, n.7, pp.121-126. ISSN 1794-1237.

The use of low dimensional structures is a key technological element in the creation of new quantum functional devices in the development of the next generation of the electronic, photonic, and spintronic integrated circuits and many other nanoscaled devices that are necessary for the information society of 21^st century. One of the most important optical properties is the photoluminescence produced by agents as impurities and excitons in GaAs quantum wells, wires, and dots with nanometric dimensions under the influence of electric and magnetic fields and external pressures. The binding energy for the first three excitonic states in GaAs/Ga_1-xA1_xAs quantum wells describing the system through quantum theory in the effective mass approximation and using the variational method is presented.

Keywords : low dimensional structures; nanotechnology; exciton; quantum well; quantum wire; quantum dot.

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