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Revista EIA
versão impressa ISSN 1794-1237
Resumo
ALVAREZ OCAMPO, Carlos Andrés e ACUNA HERRERA, Rodrigo. ABSORPTION OF TWO PHOTONS IN QUANTUM WELLS FORMED WITH ALUMINUM DUMPED GaAs. Rev.EIA.Esc.Ing.Antioq [online]. 2017, vol.14, n.28, pp.77-83. ISSN 1794-1237. https://doi.org/10.24050/reia.v14i28.1128.
In this work we show how the absorption of two photons is modified due to the molar fraction of aluminum dopant present in the quantum wells formed with gallium arsenide. The study was performed taking into account the refractive index that depends on the mole fraction of aluminum dopant and the wavelength of light that hits the wells. The results suggest how to manipulate the design parameters to improve the performance of a photo-detector device suitable for wavelengths of 1.310 nm and 1.550 nm.
Palavras-chave : Two photon absortion; quantum Wells; molar fraction; Charge Carrier; Optical telecommunication; Energy gap.