Resumen

SARMIENTO CRUZ, Norma Diana et al. Physical Properties of GaSb Nanostructures for Spintronic Applications. Rev.EIA.Esc.Ing.Antioq [online]. 2019, vol.16, n.31, pp.89-97. ISSN 1794-1237.  https://doi.org/10.24050/reia.v16i31.1272.

In this work, GaSb thin films were prepared by DC magnetron sputtering method using Soda Lime-type glass and ITO (Indium tin oxide), as substrates. Annealing processes were carried out under high vacuum conditions to avoid the incorporation of oxygen (O) atoms present in the atmosphere. From X-ray diffraction (XRD) measurements it was possible to establish a Zinc-blende type structure and InO phases associated to the ITO substrate. The annealing processes showed a significant improvement in the crystallinity of the material being less amorphous when the annealing temperature (Tr) was 673 K. A value of the gap energy ranging from 0.75 to 0.85 eV was obtained in samples of GaSb when the Tr changed between 300 K and 673 K, respectively. Scanning Electron Microscopy (SEM) and atomic force microscopy (AFM) measurements provided information on the surface morphology of the material.

Palabras clave : Sputtering; zinc blende; nanostructurs; spintronics; thin films.

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