<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>1909-3667</journal-id>
<journal-title><![CDATA[Tecciencia]]></journal-title>
<abbrev-journal-title><![CDATA[Tecciencia]]></abbrev-journal-title>
<issn>1909-3667</issn>
<publisher>
<publisher-name><![CDATA[Universidad ECCI]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S1909-36672020000100028</article-id>
<article-id pub-id-type="doi">10.18180/tecciencia.28.3</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Stability Performance of a Quantum Square-shaped Extended Source P-N-P-N TFET with Silicon Carbide Substrate by Means of a Physics-Based Analytical Model]]></article-title>
<article-title xml:lang="es"><![CDATA[Desempeño de Estabilidad de una Fuente Cuántica Cuadrada Extendida P-N-P-N TFET con Sustrato de Carburo de Silicio Mediante un Modelo Analítico Físico]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Sabaghi]]></surname>
<given-names><![CDATA[Masoud]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Atomic Energy Organization of Iran (AEOI) Photonics and Quantum Technologies Research School Nuclear Science and Technology Research Institute (NSTRI)]]></institution>
<addr-line><![CDATA[Tehran ]]></addr-line>
<country>Iran</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>06</month>
<year>2020</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>06</month>
<year>2020</year>
</pub-date>
<volume>15</volume>
<numero>28</numero>
<fpage>28</fpage>
<lpage>35</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.co/scielo.php?script=sci_arttext&amp;pid=S1909-36672020000100028&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.co/scielo.php?script=sci_abstract&amp;pid=S1909-36672020000100028&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.co/scielo.php?script=sci_pdf&amp;pid=S1909-36672020000100028&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[ABSTRACT. In this paper, an analytical stability model for quantum square-shaped extended source P-N-P-N tunneling field-effect transistor (P-N-P-N TFET) with silicon carbide substrate is developed that includes the effects of gate-source capacitance, gate-drain capacitance, effective gate resistance, time constant and transconductance. A nonquasistatic RF small-signal model has been used and stability that was extracted from analytical equations of its Y-parameters. The obtained analytical expression for stability is compared with device simulation results and excellent agreement is found up to 100 GHz. The stability performance of a quantum square-shaped extended source P-N-P-N TFET with silicon carbide substrate is also studied analytically considering pocket width and doping variation. The results strongly confirm that the proposed model is accurate and suitable for the quantum square-shaped extended source P-N-P-N TFET in the high-frequency regime]]></p></abstract>
<abstract abstract-type="short" xml:lang="es"><p><![CDATA[RESUMEN. En este documento, se desarrolla un modelo de estabilidad analítica para el transistor de efecto de campo de túnel PNPN de fuente extendida cuántica de forma cuadrada (PNPN TFET) con sustrato de carburo de silicio que incluye los efectos de la capacitancia de fuente de compuerta, capacitancia de drenaje de compuerta, resistencia efectiva de compuerta, constante de tiempo y transconductancia. Se ha utilizado un modelo de señal pequeña RF no cuantitativo y una estabilidad que se extrajo de las ecuaciones analíticas de sus parámetros Y. La expresión analítica obtenida para la estabilidad se compara con los resultados de la simulación del dispositivo y se encuentra que los resultados coinciden bien hasta 100 GHz. El rendimiento de estabilidad de un TFET P-N-P-N de fuente extendida cuántica con sustrato de carburo de silicio también se estudia analíticamente considerando el Pocket-Width y la variación de dopaje. Los resultados confirman que el modelo propuesto es preciso y adecuado para la fuente extendida cuántica de forma cuadrada P-N-P-N TFET en el régimen de alta frecuencia]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[Analytical modeling]]></kwd>
<kwd lng="en"><![CDATA[Nonquasistatic (NQS)]]></kwd>
<kwd lng="en"><![CDATA[Quantum extended source, stability]]></kwd>
<kwd lng="en"><![CDATA[silicon carbide]]></kwd>
<kwd lng="en"><![CDATA[P-N-P-N Tunneling field-effect transistor (P-N-P-N TFET)]]></kwd>
<kwd lng="es"><![CDATA[Modelos analíticos]]></kwd>
<kwd lng="es"><![CDATA[No cuasi-estático (NQS)]]></kwd>
<kwd lng="es"><![CDATA[Fuente cuántica extendidad, Estabilidad]]></kwd>
<kwd lng="es"><![CDATA[Carburo de silicio]]></kwd>
<kwd lng="es"><![CDATA[P-N-P-N Transistor de efecto de campo de túnel (TFETP-N-P-N)]]></kwd>
</kwd-group>
</article-meta>
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