<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>1794-1237</journal-id>
<journal-title><![CDATA[Revista EIA]]></journal-title>
<abbrev-journal-title><![CDATA[Rev.EIA.Esc.Ing.Antioq]]></abbrev-journal-title>
<issn>1794-1237</issn>
<publisher>
<publisher-name><![CDATA[Escuela de ingenieria de Antioquia]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S1794-12372019000100089</article-id>
<article-id pub-id-type="doi">10.24050/reia.v16i31.1272</article-id>
<title-group>
<article-title xml:lang="es"><![CDATA[Propiedades físicas de nanoestructuras de GaSb para aplicaciones en espintrónica]]></article-title>
<article-title xml:lang="en"><![CDATA[Physical Properties of GaSb Nanostructures for Spintronic Applications]]></article-title>
<article-title xml:lang="pt"><![CDATA[Propriedades físicas de nanoestruturas GaSb para aplicações em spintrônica]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Sarmiento Cruz]]></surname>
<given-names><![CDATA[Norma Diana]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Rodríguez Ballesteros]]></surname>
<given-names><![CDATA[Ismael Fernando]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Quiroz Gaitán]]></surname>
<given-names><![CDATA[Heiddy Paola]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Dussán Cuenca]]></surname>
<given-names><![CDATA[Anderson]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Velásquez Moya]]></surname>
<given-names><![CDATA[Ximena Audrey]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,aff1  ]]></institution>
<addr-line><![CDATA[ ]]></addr-line>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>06</month>
<year>2019</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>06</month>
<year>2019</year>
</pub-date>
<volume>16</volume>
<numero>31</numero>
<fpage>89</fpage>
<lpage>97</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://www.scielo.org.co/scielo.php?script=sci_arttext&amp;pid=S1794-12372019000100089&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.co/scielo.php?script=sci_abstract&amp;pid=S1794-12372019000100089&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://www.scielo.org.co/scielo.php?script=sci_pdf&amp;pid=S1794-12372019000100089&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="es"><p><![CDATA[Resumen En este trabajo se fabricaron películas delgadas nanoestructuradas de GaSb por el método de pulverización catódica asistidas por campo magnético sobre sustratos de vidrio e ITO. Se realizaron procesos de recocido posterior a la preparación y bajo condiciones de alto vacío que evitaran la incorporación de átomos de oxígeno presentes en la atmósfera. A partir de medidas de difracción de rayos X se pudo establecer una estructura tipo blenda de Zinc y fases de InO asociadas al sustrato ITO. Los procesos de recocido permitieron evidenciar una mejora significativa en la cristalinidad del material siendo éste menos amorfo cuando la temperatura de recocido (Tr) fue de 673 K. Un valor de la brecha de energía prohibida variando entre 0.75 y 0.85 eV fue obtenido en muestras de GaSb cuando la Tr cambió entre 300 K y 673 K, respectivamente. Medidas de microscopia electrónica de barrido y fuerza atómica permitieron obtener información de la morfología en la superficie del material.]]></p></abstract>
<abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract In this work, GaSb thin films were prepared by DC magnetron sputtering method using Soda Lime-type glass and ITO (Indium tin oxide), as substrates. Annealing processes were carried out under high vacuum conditions to avoid the incorporation of oxygen (O) atoms present in the atmosphere. From X-ray diffraction (XRD) measurements it was possible to establish a Zinc-blende type structure and InO phases associated to the ITO substrate. The annealing processes showed a significant improvement in the crystallinity of the material being less amorphous when the annealing temperature (Tr) was 673 K. A value of the gap energy ranging from 0.75 to 0.85 eV was obtained in samples of GaSb when the Tr changed between 300 K and 673 K, respectively. Scanning Electron Microscopy (SEM) and atomic force microscopy (AFM) measurements provided information on the surface morphology of the material.]]></p></abstract>
<abstract abstract-type="short" xml:lang="pt"><p><![CDATA[Resumo Neste trabalho, os filmes finos de GaSb foram preparados pelo método de pulverização catódica assistido por campo magnético em substratos de vidro e ITO (óxido de estanho de índio). Após os processos de recozimento foram realizados em condições de alto vácuo que evitam a incorporação de átomos de oxigênio (O) presentes na atmosfera. A partir de medições de difração de raios X (XRD), foi possível estabelecer uma estrutura semelhante ao Zenz Blende e as fases InO associadas ao substrato ITO. Os processos de recozimento mostraram uma melhoria significativa na cristalinidade do material sendo menos amorfa quando a temperatura de recozimento (Tr) foi de 673 K. Foi obtido um valor do intervalo de energia proibido variando de 0,75 a 0,85 eV em amostras de GaSb quando o Tr mudou entre 300 K e 673 K, respectivamente. As medições de microscopia eletrônica de varredura (SEM) e microscopia de força atômica (AFM) forneceram informações sobre a morfologia da superfície do material.]]></p></abstract>
<kwd-group>
<kwd lng="es"><![CDATA[Pulverización catódica]]></kwd>
<kwd lng="es"><![CDATA[blenda de Zinc]]></kwd>
<kwd lng="es"><![CDATA[nanoestructuras]]></kwd>
<kwd lng="es"><![CDATA[espintrónicos]]></kwd>
<kwd lng="es"><![CDATA[películas delgadas]]></kwd>
<kwd lng="en"><![CDATA[Sputtering]]></kwd>
<kwd lng="en"><![CDATA[zinc blende]]></kwd>
<kwd lng="en"><![CDATA[nanostructurs]]></kwd>
<kwd lng="en"><![CDATA[spintronics]]></kwd>
<kwd lng="en"><![CDATA[thin films]]></kwd>
<kwd lng="pt"><![CDATA[Sputtering]]></kwd>
<kwd lng="pt"><![CDATA[Blende zinco]]></kwd>
<kwd lng="pt"><![CDATA[nanoestruturas]]></kwd>
<kwd lng="pt"><![CDATA[spintrónica]]></kwd>
<kwd lng="pt"><![CDATA[filmes finos]]></kwd>
</kwd-group>
</article-meta>
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